The second desideratum, of low thermal and high electrical conductivity, was achieved by dividing the bismuth telluride into pellets a few nanometres across. 第二个所愿望之物&低热量和高导电性,是通过将整个铋碲划分成几个纳米颗粒实现的。
Preparation and Microfabrication of Bismuth Telluride Thermoelectric Materials 碲化铋热电材料的制备及其微成型技术研究
And, magnetoresistance ( MR) effect of bismuth, bismuth telluride, and so forth, has been studied. 并探讨了铋、碲化铋等纳米材料的磁阻效应。
Deposition of bismuth telluride thin film by electrochemical atomic epitaxy ( ECALE) was firstly reported in this paper. 本文首次研究了电化学原子层外延(ECALE)法室温沉积碲化铋纳米薄膜的过程。ECALE是原子层外延的电化学模拟。
Preparation and Thermoelectric Properties of N-type Bismuth Telluride-based Materials n型Bi2Te3系热电材料成型与性能研究
Preparation of Bismuth Telluride Thin Film by Electrochemical Atomic Layer Epitaxy 电化学生物传感器电化学原子层外延法制备碲化铋薄膜
The relative composition measurement of bismuth telluride ( Bi xTe y) was carried out in the method of flame atom_absorbed spectrum ( FAAS). The bismuth telluride alloy films was resolved by ( 1+ 1) HNO 3 at room temperature. 研究了在室温下用(1+1)HNO3溶解Bi&Te合金薄膜,用火焰原子吸收光谱法测定Bi,Te的含量。
The prominent species used for 200-400 K range come from bismuth telluride based semiconductors. 在200-400K温度范围内使用的主流热电材料是碲化铋基热电半导体。
As one of the most excellent thermoelectric materials near room temperature, bismuth telluride based compounds are extensively used in the area of aerospace, medical appliance, microelectronic devices, biologic slug and so on. Bi2Te3基化合物作为室温附近性能最好的热电材料之一,在航空航天、医疗器材、微电子及生物芯片等多种领域具有广泛的应用前途。